[P-6-2] Fabrication Low-voltage Amorphous Indium Zinc Oxide(a-IZO) Thin Film Transistors using High Dielectric HfO₂ as Gate Insulator at Room Tempature

W. K. Lin¹、C. S. Li²、K. C. Liu²、S. T. Chang¹ (1.National Chung Hsing Univ.(Taiwan)、2.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-6-2