Self-cleaning Effects on Atomic Layer Deposition (ALD) of Al<sub>2</sub>O<sub>3</sub> on InGaAs with Several Surface Treatments

H. D. Trinh; E. Y. Chang; Y. Y. Wong; C. Y. Chang; C. C. Yu

doi:https://doi.org/10.7567/SSDM.2009.P-6-3

[P-6-3] Self-cleaning Effects on Atomic Layer Deposition (ALD) of Al₂O₃ on InGaAs with Several Surface Treatments

H. D. Trinh^1,2, E. Y. Chang¹, Y. Y. Wong¹, C. Y. Chang¹, C. C. Yu³ (1.National Chiao Tung Univ.(Taiwan), 2.Hanoi National Univ. of Edu.(Vietnam), 3.National Applied Res. Labs.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-6-3

2009 International Conference on Solid State Devices and Materials

[P-6-3] Self-cleaning Effects on Atomic Layer Deposition (ALD) of Al2O3 on InGaAs with Several Surface Treatments

[P-6-3] Self-cleaning Effects on Atomic Layer Deposition (ALD) of Al₂O₃ on InGaAs with Several Surface Treatments