2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[P-6-7] High Mobility In-Ga-Zn-oxide Thin-film Transistor with Sb₂TeO_x Gate Insulator Fabricated by Reactive Sputtering

W. S. Cheong¹, S. M. Yoon¹, S. Yang¹, C. S. Hwang¹ (1.ETRI)

https://doi.org/10.7567/SSDM.2009.P-6-7

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