[P-6-7] High Mobility In-Ga-Zn-oxide Thin-film Transistor with Sb₂TeO_x Gate Insulator Fabricated by Reactive Sputtering

W. S. Cheong¹、S. M. Yoon¹、S. Yang¹、C. S. Hwang¹ (1.ETRI)

https://doi.org/10.7567/SSDM.2009.P-6-7