Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO<sub>2</sub>(350 nm)/Si

S. Ogawa; H. Sumi; A. Saikubo; E. Ikenaga; M. Sato; M. Nihei; Y. Takakuwa

doi:https://doi.org/10.7567/SSDM.2009.P-8-4

[P-8-4] Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO₂(350 nm)/Si

S. Ogawa^1,2, H. Sumi¹, A. Saikubo^2,3, E. Ikenaga^2,3, M. Sato^2,4, M. Nihei^2,4, Y. Takakuwa^1,2 (1.Tohoku Univ.(Japan), 2.CREST-JST(Japan), 3.JASRI/SPring-8(Japan), 4.Fujitsu Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.P-8-4

2009 International Conference on Solid State Devices and Materials

[P-8-4] Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO2(350 nm)/Si

[P-8-4] Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO₂(350 nm)/Si