Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO<sub>2</sub>(350 nm)/Si

S. Ogawa; H. Sumi; A. Saikubo; E. Ikenaga; M. Sato; M. Nihei; Y. Takakuwa

doi:https://doi.org/10.7567/SSDM.2009.P-8-4

[P-8-4] Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO₂(350 nm)/Si

S. Ogawa^1,2、H. Sumi¹、A. Saikubo^2,3、E. Ikenaga^2,3、M. Sato^2,4、M. Nihei^2,4、Y. Takakuwa^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan)、3.JASRI/SPring-8(Japan)、4.Fujitsu Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.P-8-4

2009 International Conference on Solid State Devices and Materials

[P-8-4] Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO2(350 nm)/Si

[P-8-4] Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO₂(350 nm)/Si