Generation Mechanism of Photoemission-assisted Plasma on SiO<sub>2</sub>(350 nm)/Si Substrate

T. Kaga; S. Ogawa; H. Hozumi; H. Sumi; M. Sato; M. Nihei; Y. Takakuwa

doi:https://doi.org/10.7567/SSDM.2009.P-8-8

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[P-8-8] Generation Mechanism of Photoemission-assisted Plasma on SiO₂(350 nm)/Si Substrate

T. Kaga¹, S. Ogawa^1,2, H. Hozumi¹, H. Sumi¹, M. Sato^2,3, M. Nihei^2,3, Y. Takakuwa^1,2 (1.Tohoku Univ.(Japan), 2.CREST-JST(Japan), 3.Fujitsu Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.P-8-8

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2009 International Conference on Solid State Devices and Materials

[P-8-8] Generation Mechanism of Photoemission-assisted Plasma on SiO2(350 nm)/Si Substrate

[P-8-8] Generation Mechanism of Photoemission-assisted Plasma on SiO₂(350 nm)/Si Substrate