[B-2-3] Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO₂

R. Zhang¹, T. Iwasaki¹, N. Taoka¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2010.B-2-3