[B-2-3] Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO₂

R. Zhang¹、T. Iwasaki¹、N. Taoka¹、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2010.B-2-3