The Japan Society of Applied Physics

[B-3-4] Enhanced Electrical Uniformity and Breakdown of Multi-Step Deposited and Annealed HfSiO-Insight by Scanning Tunneling Microscopy

K. S. Yew1、D. S. Ang1、K. L. Pey1、G. Bersuker2、P. S. Lysaght2、D. Heh2 (1.Nanyang Tech. Univ. , Singapore、2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2010.B-3-4