[B-3-4] Enhanced Electrical Uniformity and Breakdown of Multi-Step Deposited and Annealed HfSiO-Insight by Scanning Tunneling Microscopy

K. S. Yew¹、D. S. Ang¹、K. L. Pey¹、G. Bersuker²、P. S. Lysaght²、D. Heh² (1.Nanyang Tech. Univ. , Singapore、2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2010.B-3-4