[B-3-4] Enhanced Electrical Uniformity and Breakdown of Multi-Step Deposited and Annealed HfSiO-Insight by Scanning Tunneling Microscopy

K. S. Yew¹, D. S. Ang¹, K. L. Pey¹, G. Bersuker², P. S. Lysaght², D. Heh² (1.Nanyang Tech. Univ. , Singapore, 2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2010.B-3-4