[B-4-2] Analytical Approach for Enhancement of nMOSFET Performance with Si:C Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

T. Yamaguchi¹、Y. Kawasaki¹、T. Yamashita¹、N. Miura¹、M. Mizuo¹、J. Tsuchimoto¹、K. Eikyu¹、K. Maekawa¹、M. Fujisawa¹、K. Asai¹ (1.Renesas Electronics Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.B-4-2