Analytical Approach for Enhancement of nMOSFET Performance with Si:C Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

T. Yamaguchi; Y. Kawasaki; T. Yamashita; N. Miura; M. Mizuo; J. Tsuchimoto; K. Eikyu; K. Maekawa; M. Fujisawa; K. Asai

doi:https://doi.org/10.7567/SSDM.2010.B-4-2

[B-4-2] Analytical Approach for Enhancement of nMOSFET Performance with Si:C Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

T. Yamaguchi¹, Y. Kawasaki¹, T. Yamashita¹, N. Miura¹, M. Mizuo¹, J. Tsuchimoto¹, K. Eikyu¹, K. Maekawa¹, M. Fujisawa¹, K. Asai¹ (1.Renesas Electronics Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.B-4-2

2010 International Conference on Solid State Devices and Materials

[B-4-2] Analytical Approach for Enhancement of nMOSFET Performance with Si:C Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing