Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application

C. S. Park; G. Bersuker; T. Ngai; J. Huang; K. H. Lin; J. Barnett; J. Price; K. Rader; P. Lysaght; B. Taylor; P. D. Kirsch; R. Jammy

doi:https://doi.org/10.7567/SSDM.2010.B-4-3

[B-4-3] Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application

C. S. Park¹, G. Bersuker¹, T. Ngai¹, J. Huang¹, K. H. Lin², J. Barnett¹, J. Price¹, K. Rader¹, P. Lysaght¹, B. Taylor¹, P. D. Kirsch¹, R. Jammy¹ (1.SEMATECH , USA, 2.UMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.B-4-3

2010 International Conference on Solid State Devices and Materials

[B-4-3] Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application