Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application

C. S. Park; G. Bersuker; T. Ngai; J. Huang; K. H. Lin; J. Barnett; J. Price; K. Rader; P. Lysaght; B. Taylor; P. D. Kirsch; R. Jammy

doi:https://doi.org/10.7567/SSDM.2010.B-4-3

[B-4-3] Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application

C. S. Park¹、G. Bersuker¹、T. Ngai¹、J. Huang¹、K. H. Lin²、J. Barnett¹、J. Price¹、K. Rader¹、P. Lysaght¹、B. Taylor¹、P. D. Kirsch¹、R. Jammy¹ (1.SEMATECH , USA、2.UMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.B-4-3

2010 International Conference on Solid State Devices and Materials

[B-4-3] Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application