[B-5-1] Asymmetric Gate-oxide Thickness Four-terminal FinFETs Fabricated using Low-Temperature and Atomically Flat interface Neutral-Beam Oxidation Process
A. Wada1, K. Endo2, M. Masahara2, S. Samukawa1
(1.Tohoku Univ., 2.AIST , Japan)
https://doi.org/10.7567/SSDM.2010.B-5-1
