[B-5-1] Asymmetric Gate-oxide Thickness Four-terminal FinFETs Fabricated using Low-Temperature and Atomically Flat interface Neutral-Beam Oxidation Process

A. Wada¹、K. Endo²、M. Masahara²、S. Samukawa¹ (1.Tohoku Univ.、2.AIST , Japan)

https://doi.org/10.7567/SSDM.2010.B-5-1