The Japan Society of Applied Physics

[B-6-2] Raised S/D for Advanced Planar MOSFET devices: Challenges and Applications for the 20nm Node and Beyond

N. Loubet1、P. Khare1、S. Mehta2、S. Ponoth2、B. Haren2、Q. Liu1、K. Cheng2、J. Kuss2、T. Adam2、B. Doris2、V. Paruchuri2、W. Kleemeier1、R. Sampson1 (1.STMicroelectronics、2.IBM , USA)

https://doi.org/10.7567/SSDM.2010.B-6-2