[B-6-3] Raman Spectroscopy Measurement of Silicidation Induced Stress in Si and its Impact on Performances of Metal Source/Drain MOSFETs

S. Migita¹, V. Poborchii¹, T. Tada¹, Y. Morita¹, W. Mizubayashi¹, H. Ota¹ (1.AIST , Japan)

https://doi.org/10.7567/SSDM.2010.B-6-3