[B-6-4] Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm CMOS technology and Beyond

K. Ohuchi¹, N. Kusunoki¹, F. Matsuoka¹ (1.Toshiba America Electronic Components, Inc. , USA)

https://doi.org/10.7567/SSDM.2010.B-6-4