Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si<sub>0.2</sub>Ge<sub>0.8</sub>

Y. Kawamura; M. Uematsu; K. M. Itoh; Y. Hoshi; K. Sawano; Y. Shiraki; E. Haller; M. Myronov

doi:https://doi.org/10.7567/SSDM.2010.B-6-5L

[B-6-5L] Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si_0.2Ge_0.8

Y. Kawamura¹、M. Uematsu¹、K. M. Itoh¹、Y. Hoshi²、K. Sawano²、Y. Shiraki²、E. Haller³、M. Myronov⁴ (1.Keio Univ.、2.Tokyo City Univ. , Japan、3.Univ. of California Berkeley , USA、4.The Univ. of Warwick , UK)

https://doi.org/10.7567/SSDM.2010.B-6-5L

2010 International Conference on Solid State Devices and Materials

[B-6-5L] Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si0.2Ge0.8

[B-6-5L] Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si_0.2Ge_0.8