Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al<sub>2</sub>O<sub>3</sub>/InGaAs Capacitors

Y. Urabe; N. Miyata; T. Yasuda; H. Yamada; M. Hata; N. Taoka; T. Hoshii; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2010.C-1-1

[C-1-1] Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al₂O₃/InGaAs Capacitors

Y. Urabe¹、N. Miyata¹、T. Yasuda¹、H. Yamada²、M. Hata²、N. Taoka³、T. Hoshii³、M. Takenaka³、S. Takagi³ (1.AIST、2.Sumitomo Chemical Co., Ltd.、3.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2010.C-1-1

2010 International Conference on Solid State Devices and Materials

[C-1-1] Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al2O3/InGaAs Capacitors

[C-1-1] Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al₂O₃/InGaAs Capacitors