[C-4-3] Device Engineering to Improve SRAM Static Noise Margin

J. Luo¹、L. Wei¹、F. Boeuf²、D. Antoniadis³、T. Skotnicki²、H. S. P. Wong¹ (1.Stanford Univ. , USA、2.STMicroelectronics , France、3.MIT , USA)

https://doi.org/10.7567/SSDM.2010.C-4-3