2010 International Conference on Solid State Devices and Materials
2010年9月21日 〜 2010年9月24日 The University of Tokyo, Tokyo, Japan
[C-4-4L] Qualitative Differences Between Conduction Band Edge Excitonic States and Electron Tapping in (i) SiO2 and (ii) Si3N4 and Si Oxynitride Alloy Films