2010 International Conference on Solid State Devices and Materials
Sep 21, 2010 - Sep 24, 2010 The University of Tokyo, Tokyo, Japan
[C-4-4L] Qualitative Differences Between Conduction Band Edge Excitonic States and Electron Tapping in (i) SiO2 and (ii) Si3N4 and Si Oxynitride Alloy Films
