The Japan Society of Applied Physics

[C-5-2] Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J. L. Huguenin1,2, S. Monfray1, G. Bidal1, S. Denorme1, P. Perreau3,1, N. Loubet1, Y. Campidelli1, M. P. Samson3,1, C. Arvet3,1, K. Benotmane3, F. Leverd1, P. Gouraud1, B. Le-Gratiet1, C. De-Butet3,1, L. Pinzelli1, R. Beneyton1, S. Barnola3, T. Morel1, A. Halimaoui1, F. Boeuf1, G. Ghibaudo2, T. Skotnicki1 (1.STMicroelectronics, 2.IMEP, 3.CEA-LETI , France)

https://doi.org/10.7567/SSDM.2010.C-5-2