Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J. L. Huguenin; S. Monfray; G. Bidal; S. Denorme; P. Perreau; N. Loubet; Y. Campidelli; M. P. Samson; C. Arvet; K. Benotmane; F. Leverd; P. Gouraud; B. Le-Gratiet; C. De-Butet; L. Pinzelli; R. Beneyton; S. Barnola; T. Morel; A. Halimaoui; F. Boeuf; G. Ghibaudo; T. Skotnicki

doi:https://doi.org/10.7567/SSDM.2010.C-5-2

[C-5-2] Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J. L. Huguenin^1,2、S. Monfray¹、G. Bidal¹、S. Denorme¹、P. Perreau^3,1、N. Loubet¹、Y. Campidelli¹、M. P. Samson^3,1、C. Arvet^3,1、K. Benotmane³、F. Leverd¹、P. Gouraud¹、B. Le-Gratiet¹、C. De-Butet^3,1、L. Pinzelli¹、R. Beneyton¹、S. Barnola³、T. Morel¹、A. Halimaoui¹、F. Boeuf¹、G. Ghibaudo²、T. Skotnicki¹ (1.STMicroelectronics、2.IMEP、3.CEA-LETI , France)

https://doi.org/10.7567/SSDM.2010.C-5-2

2010 International Conference on Solid State Devices and Materials

[C-5-2] Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications