[C-5-4] Low GIDL and Its Physical Origins in Si Nanowire Transistors

K. Zaitsu¹、M. Saitoh¹、Y. Nakabayashi¹、T. Ishihara¹、T. Numata¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.C-5-4