Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts

A. Toda; K. Ohyama; N. Higashiguchi; D. Hori; M. Miyake; S. Amakawa; J. Ida; M. Miura-Mattausch

doi:https://doi.org/10.7567/SSDM.2010.C-6-3

[C-6-3] Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts

A. Toda¹、K. Ohyama¹、N. Higashiguchi¹、D. Hori¹、M. Miyake¹、S. Amakawa¹、J. Ida²、M. Miura-Mattausch¹ (1.Hiroshima Univ.、2.Kanazawa Inst. of Tech. , Japan)

https://doi.org/10.7567/SSDM.2010.C-6-3

2010 International Conference on Solid State Devices and Materials

[C-6-3] Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts