Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature

C. Xu; P. Batude; C. Rauer; C. Le Royer; L. Hutin; A. Pouydebasque; C. Tabone; B. Previtali; O. Faynot; M. Mouis; V. Vinet

doi:https://doi.org/10.7567/SSDM.2010.C-6-4

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[C-6-4] Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature

C. Xu¹, P. Batude¹, C. Rauer¹, C. Le Royer¹, L. Hutin¹, A. Pouydebasque¹, C. Tabone¹, B. Previtali¹, O. Faynot¹, M. Mouis², V. Vinet¹ (1.CEA-LETI/MINATEC, 2.IMEP , France)

https://doi.org/10.7567/SSDM.2010.C-6-4

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