Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature

C. Xu; P. Batude; C. Rauer; C. Le Royer; L. Hutin; A. Pouydebasque; C. Tabone; B. Previtali; O. Faynot; M. Mouis; V. Vinet

doi:https://doi.org/10.7567/SSDM.2010.C-6-4

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[C-6-4] Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature

C. Xu¹、P. Batude¹、C. Rauer¹、C. Le Royer¹、L. Hutin¹、A. Pouydebasque¹、C. Tabone¹、B. Previtali¹、O. Faynot¹、M. Mouis²、V. Vinet¹ (1.CEA-LETI/MINATEC、2.IMEP , France)

https://doi.org/10.7567/SSDM.2010.C-6-4

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