[C-7-2] High-k Metal Gate FinFET SRAM Cell Optimization Considering Variability due to NBTI/PBTI and Surface Orientation

V. P. H. Hu¹、M. L. Fan¹、C. Y. Hsieh¹、P. Su¹、C. T. Chuang¹ (1.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.C-7-2