Investigation of Recovery Effects on Degraded pMOSFETs of 65 nm Technology with Different Annealing Temperatures

S. Y. Chen; C. H. Tu; Y. F. Chen; H. S. Huang; Z. W. Jhou; S. Chou; J. Ko

doi:https://doi.org/10.7567/SSDM.2010.C-8-4

[C-8-4] Investigation of Recovery Effects on Degraded pMOSFETs of 65 nm Technology with Different Annealing Temperatures

S. Y. Chen¹, C. H. Tu¹, Y. F. Chen¹, H. S. Huang¹, Z. W. Jhou², S. Chou², J. Ko² (1.National Taipei Univ. of Tech., 2.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2010.C-8-4

2010 International Conference on Solid State Devices and Materials

[C-8-4] Investigation of Recovery Effects on Degraded pMOSFETs of 65 nm Technology with Different Annealing Temperatures