[C-9-2] High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization

J. Mitard¹, B. De Jaeger¹, G. Eneman^2,3, A. Dobbie⁴, M. Myronov⁴, M. Kobayashi⁵, J. Geypen¹, H. Bender¹, B. Vincent¹, R. Krom², J. Franco², G. Winderickx¹, E. Vrancken¹, W. Vanherle¹, W. E. Wang¹, J. Tseng⁶, R. Loo¹, K. De Meyer², M. Caymax¹, L. Pantisano¹, D. R. Leadley⁴, M. Meuris¹, P. P. Absil¹, S. Biesemans¹, T. Hoffmann¹ (1.IMEC, 2.K. U Leuven, 3.FWO , Belgium, 4.Univ. of Warwick , UK, 5.Stanford Univ. , USA, 6.TSMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.C-9-2