[C-9-2] High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization

J. Mitard¹、B. De Jaeger¹、G. Eneman^2,3、A. Dobbie⁴、M. Myronov⁴、M. Kobayashi⁵、J. Geypen¹、H. Bender¹、B. Vincent¹、R. Krom²、J. Franco²、G. Winderickx¹、E. Vrancken¹、W. Vanherle¹、W. E. Wang¹、J. Tseng⁶、R. Loo¹、K. De Meyer²、M. Caymax¹、L. Pantisano¹、D. R. Leadley⁴、M. Meuris¹、P. P. Absil¹、S. Biesemans¹、T. Hoffmann¹ (1.IMEC、2.K. U Leuven、3.FWO , Belgium、4.Univ. of Warwick , UK、5.Stanford Univ. , USA、6.TSMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.C-9-2