Ge FETs Gate Stack Passivation Options and their Scalability to low EOT

F. Bellenger; B. De Jaeger; L. Nyns; M. Zahid; M. Houssa; E. Vrancken; J. Tseng; M. Caymax; M. Meuris; K. De Meyer; M. Heyns; T. Hoffmann

doi:https://doi.org/10.7567/SSDM.2010.C-9-3

[C-9-3] Ge FETs Gate Stack Passivation Options and their Scalability to low EOT

F. Bellenger^1,2, B. De Jaeger¹, L. Nyns¹, M. Zahid¹, M. Houssa², E. Vrancken¹, J. Tseng³, M. Caymax¹, M. Meuris¹, K. De Meyer^1,2, M. Heyns^1,2, T. Hoffmann¹ (1.IMEC, 2.KULeuven , Belgium, 3.TSMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.C-9-3

2010 International Conference on Solid State Devices and Materials

[C-9-3] Ge FETs Gate Stack Passivation Options and their Scalability to low EOT