[E-1-1] Performance Improvement of a Novel Capacitor-less 1T-DRAM Based on a Lateral p Type Doped Region

G. Guegan¹、G. Molas¹、S. Puget²、C. Raynaud¹ (1.CEA-LETI/MINATEC、2.STMicroelectronics , France)

https://doi.org/10.7567/SSDM.2010.E-1-1