[E-2-1] Improvement of Data Retention in NAND Flash Memory for beyond 3x nm using HTO Liner and IPD Thickness Optimization
J. S. Leem1, J. Seo1, B. K. Kim1, K. S. Kim1, H. H. Chang1, K. O. Ahn1, S. K. Lee1, S. J. Hong1
(1.Hynix Semiconductor Inc. , Korea)
https://doi.org/10.7567/SSDM.2010.E-2-1
