[E-2-1] Improvement of Data Retention in NAND Flash Memory for beyond 3x nm using HTO Liner and IPD Thickness Optimization

J. S. Leem¹、J. Seo¹、B. K. Kim¹、K. S. Kim¹、H. H. Chang¹、K. O. Ahn¹、S. K. Lee¹、S. J. Hong¹ (1.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2010.E-2-1