[E-2-4] A Low Power and Improving Read Disturb Characteristics by Using Multi-CSL Architecture in MLC NAND Flash Memory

M. Kang^1,2, K. T. Park², Y. Song², S. Lee², Y. Lim², K. D. Suh³, H. Shin¹ (1.Seoul National Univ., 2.Samsung Electronics Co., Ltd., 3.Sungkyunkwan Univ. , Korea)

https://doi.org/10.7567/SSDM.2010.E-2-4