[E-2-4] A Low Power and Improving Read Disturb Characteristics by Using Multi-CSL Architecture in MLC NAND Flash Memory

M. Kang^1,2、K. T. Park²、Y. Song²、S. Lee²、Y. Lim²、K. D. Suh³、H. Shin¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd.、3.Sungkyunkwan Univ. , Korea)

https://doi.org/10.7567/SSDM.2010.E-2-4