Collective Tunneling Model in Charge Trap Type NVM Cell

M. Muraguchi; Y. Sakurai; Y. Takada; Y. Shigeta; M. Ikeda; K. Makihara; S. Miyazaki; S. Nomura; K. Shiraishi; T. Endoh

doi:https://doi.org/10.7567/SSDM.2010.E-3-2

[E-3-2] Collective Tunneling Model in Charge Trap Type NVM Cell

M. Muraguchi¹, Y. Sakurai², Y. Takada², Y. Shigeta⁴, M. Ikeda³, K. Makihara³, S. Miyazaki³, S. Nomura², K. Shiraishi², T. Endoh¹ (1.Tohoku Univ., 2.Univ. of Tsukuba, 3.Hiroshima Univ., 4.Univ. of Hyogo , Japan)

https://doi.org/10.7567/SSDM.2010.E-3-2

2010 International Conference on Solid State Devices and Materials

[E-3-2] Collective Tunneling Model in Charge Trap Type NVM Cell