[E-3-3] Bandgap Engineered Nanowire (BEN) SONOS NAND Flash Memory

J. G. Yun¹、D. W. Kwon²、J. H. Lee¹、H. Shin¹、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd. , Korea)

https://doi.org/10.7567/SSDM.2010.E-3-3