[E-3-4] Atomistic Design of Guiding Principles for High Quality MONOS Memories-First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers-

K. Yamaguchi¹、A. Otake¹、K. Shiraishi¹ (1.Univ. of Tsukuba , Japan)

https://doi.org/10.7567/SSDM.2010.E-3-4