[E-4-1] Y-disturb Study of Charge-trapping Type Non-volatile Memory Cell for 45nm Generation Node
T. F. Ou1、C. H. Cheng1、W. C. Tzeng1、G. D. Lee1、S. H. Ku1、C. H. Liu1、K. W. Liu1、N. K. Zous1、W. J. Tsai1、S. W. Huang1、M. S. Chen1、W. P. Lu1、K. C. Chen1、C. Y. Lu1
(1.Macronix Int'l Co., Ltd. , Taiwan)
https://doi.org/10.7567/SSDM.2010.E-4-1