[E-4-2] In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al₂O₃ in a Charge-Trap Type Flash Memory Device

J. K. Park¹、Y. Park¹、S. K. Lim²、J. S. Oh²、M. S. Joo³、K. Hong³、B. J. Cho¹ (1.KAIST、2.National NanoFab Center、3.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2010.E-4-2