In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al<sub>2</sub>O<sub>3</sub> in a Charge-Trap Type Flash Memory Device

J. K. Park; Y. Park; S. K. Lim; J. S. Oh; M. S. Joo; K. Hong; B. J. Cho

doi:https://doi.org/10.7567/SSDM.2010.E-4-2

[E-4-2] In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al₂O₃ in a Charge-Trap Type Flash Memory Device

J. K. Park¹, Y. Park¹, S. K. Lim², J. S. Oh², M. S. Joo³, K. Hong³, B. J. Cho¹ (1.KAIST, 2.National NanoFab Center, 3.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2010.E-4-2

2010 International Conference on Solid State Devices and Materials

[E-4-2] In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device

[E-4-2] In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al₂O₃ in a Charge-Trap Type Flash Memory Device