[E-5-1] Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory Device

W. Kim¹、D. W. Kwon¹、J. H. Ji¹、J. H. Lee¹、B. G. Park¹ (1.Seoul National Univ. , Korea)

https://doi.org/10.7567/SSDM.2010.E-5-1