[E-5-1] Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory Device
W. Kim1, D. W. Kwon1, J. H. Ji1, J. H. Lee1, B. G. Park1
(1.Seoul National Univ. , Korea)
https://doi.org/10.7567/SSDM.2010.E-5-1
